DocumentCode :
3722039
Title :
Effects of post-thermal annealing on the performance characteristics of Pd/GaN Schottky diodes hydrogen sensors
Author :
Youngran Choi;Hyunsoo Kim
Author_Institution :
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University Jeonju, Chonbuk 561-756, Korea
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
The Pd/GaN Schottky diode was investigated as the hydrogen gas sensors. The post-thermal annealing was found to improve the Schottky characteristics significantly, i.e., the reverse leakage current was 5.9×10-11 A at -5 V and the rectification ratio measured at ±1.0 V was 6.8 × 108. The hydrogen sensing characteristics was also significantly improved after thermal annealing, i.e., the maximum sensitivity obtained under reverse bias condition was ~106, which was associated with the reduced Schottky barrier height.
Keywords :
"Schottky diodes","Hydrogen","Annealing","Gallium nitride","Sensor phenomena and characterization","Sensitivity"
Publisher :
ieee
Conference_Titel :
SENSORS, 2015 IEEE
Type :
conf
DOI :
10.1109/ICSENS.2015.7370585
Filename :
7370585
Link To Document :
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