High frequency modeling of power MOSFET

EMI becomes unavoidable owing to the high frequency of power electronics. In order to predict and reduce the influence of EMI, a precise high frequency model of power MOSFET needs to be established to forecast EMI in the circuit. First, two common used power MOSFET models, the sub-circuit model and the lumped-charge model were described. After comparing the advantages and disadvantages of these two models, a novel modeling approach by using Model Architect tools in the saber was introduced. Then by comparing simulation, it was shown that the model built by Model Architect tools can reflect the real situation and is more suitable for the research of conducted EMI.