Effect on pull-in voltage and current in NEMFET by scaling channel length

The MEMS platform has attracted special attention in semiconductor industry especially for off state leakage and abrupt switching issues and Suspended Gate MOSFET was developed in micrometer scale 40 years ago. Following the technology trends NEMFET has been designed (Nano Electro-mechanical Field Effect Transistor) from micrometer scale to nanometer scale. In this paper and its performance parameters are investigated and its effect with the change of various parameters is simulated. Here we have introduced NEMFET which is having zero leakage because of the gate is separated from the channel during off state. First the reduction of channel length in micrometer scale is investigated and its effects on carrier concentration, pull-in voltage, current, sub threshold slope is analyzed. It is reported that there is small increase in sub threshold swing 58 mV/dec after decreasing channel length in nanometer scale at 60 nm channel length but the carrier concentration highly increases to 8.4*10²⁴ mol/m³ lead to increases the current to 1.32 mA and pull-in voltage decreases to 4.99 V. Moreover abrupt switching characteristics is achieved which fulfill the needs for VLSI circuit implementation. The simple structure and its switching and power issues may replace traditional MOSFET for VLSI circuit implementation in future.