Title :
Millimeter-wave bias dependent model for GaAs pHEMT based on S-parameters
Author :
Milan Makwana;Sonu Sharma;Animesh Biswas;Priya Shinghal;Robin Sloan;Zhirun Hu
Author_Institution :
Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India
fDate :
6/1/2015 12:00:00 AM
Abstract :
0.1 μm gate length GaAs pHEMT having gate peripheries of 2×25 μm (number of gate finger × unit gate width) is fabricated on the 2mil (50.8 μm) GaAs/AlGaAs/InGaAs substrate using PP10-10 process. This work presents a measurement based bias dependent model for a 2×25 μm GaAs pHEMT. Measurement includes pulsed I-V and on wafer scattering parameters for the frequency range of 45 MHz to 110 GHz. Comparison of measurement data and WIN foundry´s process design kit (PDK) model is presented using Advanced Design System (ADS).
Keywords :
"Conferences","Antennas"
Conference_Titel :
Antennas and Propagation (APCAP), 2015 IEEE 4th Asia-Pacific Conference on
DOI :
10.1109/APCAP.2015.7374393
