• DocumentCode
    3725902
  • Title

    III-Nitride quantum dot based light emitting diodes for UV emission

  • Author

    J. Brault;B. Damilano;A. Courville;M. Al Khalfioui;M. Leroux;S. Chenot;P. Vennéguès;P. De Mierry;J. Massies;D. Rosales;T. Bretagnon;B. Gil

  • Author_Institution
    CNRS-CRHEA, Rue Bernard Gré
  • Volume
    1
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    AlyGa1-yN-based nanostructures have been fabricated by Molecular Beam Epitaxy and their properties as UV emitters investigated. The structure designs leading to shortest wavelength emission are presented. Quantum dot based LED properties are shown and discussed.
  • Keywords
    "Gallium nitride","Quantum dots","Temperature measurement","Light emitting diodes","Molecular beam epitaxial growth","Surface morphology","Photoluminescence"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7375892
  • Filename
    7375892
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3725902