• DocumentCode
    3726040
  • Title

    Direct growth of thick AlN template on micro-circle patterned-si substrate

  • Author

    Binh Tinh Tran;Hideki Hirayama;Noritoshi Maeda;Masafumi Jo;Shiro Toyoda

  • Author_Institution
    Quantum Optodevice Laboratory, Advanced Science Institute, RIKEN, 2-1 Hirosawa, Wako-shi, Saitama 351-0189, Japan
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A 8-μm-thick AlN template has been successfully directly grown on micro-circle patterned-Si substrate. Low surface roughness of 3.5 nm and both screw and edge dislocation densities are in the order of 108/cm2 have been obtained.
  • Keywords
    "Aluminum nitride","III-V semiconductor materials","Substrates","Aluminum gallium nitride","Wide band gap semiconductors","Surface morphology","Rough surfaces"
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2015.7376032
  • Filename
    7376032
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3726040