DocumentCode :
3726398
Title :
PL emission of InP/GalnAs/InP core-multishell NWs grown by self-catalytic VLS mode
Author :
T. Ogino;K. Asakura;T. Waho;K. Shimomura
Author_Institution :
Dept. of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
Volume :
3
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
Photoluminescence emission of InP/GalnAs/InP coremultishell nanowires was obtained at room temperature. InP nanowires were grown on InP(111)B substrate by selfcatalytic VLS mode of MOVPE using an indium catalyst. InP-core and GaInAs-shell structure was grown by changing the growth temperature. We have successfully obtained the PL emission from these core-shell nanowires at room temperature, and measured the PL spectrum dependent on the thickness of GaInAs-shell.
Keywords :
"Nanowires","III-V semiconductor materials","Indium phosphide","Substrates","Indium","Temperature measurement","Gold"
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015 11th Conference on
Type :
conf
DOI :
10.1109/CLEOPR.2015.7376519
Filename :
7376519
Link To Document :
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