A new schmitt trigger with n-channel neuron-MOS transistor

A new structure of voltage-mode binary Schmitt trigger with n-channel neuron-MOS device is designed. In this presented circuit scheme, the hysteresis window of the Schmitt circuit can be shifted by adjusting the value of the external control signal, and the hysteresis voltage can be verified by choosing the different ratio of capacitive coupling coefficients. Besides, the proposed Schmitt circuit has a simpler structure, in which only one n-channel neuron-MOS transistor, a pMOS transistor and one conventional CMOS inverter are required. Using HSPICE program and TSMC 0.35μm 2-ploy 4-metal CMOS process parameters, the effectiveness of the proposed neuron-MOS-based Schmitt trigger is validated. The threshold and hysteresis voltages are measured during simulation.