DocumentCode :
3727689
Title :
Radiation hard design of HfO2 based 1T1R cells and memory arrays
Author :
Alessandro Grossi;Cristiano Calligaro;Eduardo Perez;Jens Schmidt;Florian Teply;Thomas Mausolf;Cristian Zambelli;Piero Olivo;Christian Wenger
Author_Institution :
Universita di Ferrara, Dipartimento di Ingegneria, Italy
fYear :
2015
fDate :
11/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
In this work the electrical performance of a Rad- Hard designed 1T-1R device based on the combination of an Enclosed Layout Transistor (ELT) and a TiN/HfO2/Ti/TiN based resistor is presented for the first time. Moreover, an architectural solution for 1Mbit radiation hard RRAM array implementation is proposed.
Keywords :
"Logic gates","Radiation hardening (electronics)","Standards","Switches","Vehicles","Resistance","Layout"
Publisher :
ieee
Conference_Titel :
Memristive Systems (MEMRISYS) 2015 International Conference on
Type :
conf
DOI :
10.1109/MEMRISYS.2015.7378390
Filename :
7378390
Link To Document :
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