Title :
A 0.45 V, 15.6 nW MOSFET-only sub-threshold voltage reference with no amplifiers
Author :
Yutao Wang;Zhangming Zhu;Jiaojiao Yao;Yintang Yang
Author_Institution :
School of Microelectronics, Xidian University, Xi´an, China
Abstract :
An ultra-low voltage, low power, low line sensitivity MOSFET-only sub-threshold voltage reference with no amplifiers is presented. The bulk-driven technique is used and most of the transistors work in the sub-threshold operation, which allows a remarkable reduction in the minimum supply voltage and power consumption. Second-order compensation improves the temperature stability and the low sensitivity is realized by the difference between two complementary currents. Moreover, a trimming circuit is adopted to compensate the process-related reference voltage variation. The proposed voltage reference has been fabricated with 0.18μm 1.8 V CMOS process. The measurement results show that the minimum power supply voltage is 0.45V; the power consumption is 15.6 nW; the average temperature coefficient measured from -40 to 85°C is 59.4ppm/°C and the line sensitivity is 0.033% with power supply voltage ranging from 0.45 to 1.8 V. In addition, the chip area is 0. 013mm2.
Keywords :
"Threshold voltage","Sensitivity","Voltage measurement","Generators","Temperature sensors","CMOS integrated circuits","MOSFET"
Conference_Titel :
Solid-State Circuits Conference (A-SSCC), 2015 IEEE Asian
DOI :
10.1109/ASSCC.2015.7387445