• DocumentCode
    3733932
  • Title

    A 0.11mm?2 150mW 10GBase-T transmitter in 28nm CMOS process

  • Author

    Tsun-Yuan Fan;Tsung-Yi Chou;Wen-Hua Chang

  • Author_Institution
    MediaTek Inc., Hsin-Chu, Taiwan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The presented IEEE802.3an 10GBASE-T transmitter utilized a current-steering DAC and low voltage line driver to achieve the low power requirement. A self-regulated amplifier is used to enhance the operating bandwidth without common mode feedback stability limitation. By using a non-cascode current driver, the center-tap voltage can be lowered to 1. 6 V so that power consumption can be reduced dramatically. The design achieves TX SFDR > 60dB with 2Vppd swing across 400 MHz band and 150mW power consumption. The transmitter is implemented in a 28nm CMOS process with 1.8V/ 1V power domain and occupies an area of 0.11 mm2.
  • Keywords
    "Computer architecture","Microprocessors","Optical transmitters","Power demand","Impedance","Linearity"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference (A-SSCC), 2015 IEEE Asian
  • Type

    conf

  • DOI
    10.1109/ASSCC.2015.7387467
  • Filename
    7387467