A 0.57?/h bias instability 0.067?/?h angle random walk MEMS gyroscope with CMOS readout circuit

This paper demonstrates a SOI MEMS vibratory gyroscope with a fully differential CMOS readout circuit in a standard 0.35-μm process. Wafer level vacuum packaging technique and thick SOI structure layer are employed to increase the mechanical sensitivity. With ultra-low noise drive and sense front-ends, and an automatic amplitude control circuit realized with chopper stabilization technique and a transconductance boosted error amplifier, the fabricated gyroscope achieves 0.5°/h bias instability and 0.067°/√h angle random walk. Operating in split mode, the gyroscope achieves 200Hz bandwidth and a nonlinearity of 1355ppm with a full scale of ±300°/s. The overall power consumption is 2.1mW under a 1.8 V supply.