220GHz wide-band MEMS switch in standard BiCMOS technology

A wideband MEMS switch with the operating frequency up to 250GHz using standard BiCMOS process in cluding embedded RF-MEMS structure has been presented in this paper. Collaborative design and optimization of mechanical characteristics and RF characteristics are carried out to guarantee the mechanical reliability. By adopting π-type circuits topology with low impedance t-line, the MEMS switch results in a measured return loss of 24 to 12dB, and an isolation of 54 to 30 dB within the frequency range of 180-250GHz, The MEMS switch exhibits an insertion loss of 1.9dB at 220GHz with pull-in voltage of 50V.