Title :
FinHEMT: FinFET-based high electron mobility transistor with strained silicon channel
Author :
Sung-Ho Kim;Jong Yul Park;Kyung Rok Kim
Author_Institution :
School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Republic of Korea
fDate :
7/1/2015 12:00:00 AM
Abstract :
We report a novel FinFET-based high electron mobility transistor (FinHEMT) with a strained-silicon (s-Si) channel proposed by a simple Si-compatible fabrication process. Through TCAD device simulation, proposed FinHEMT can be used as high-performance low-power transistor with high on-current (> 1 mA/μm) and low off-current (~10 pA/μm). Channel electron mobility in s-Si FinHEMT is highly enhanced over 1000 cmWs, which is 4 times higher than that of FinFET.
Keywords :
"Conferences","Nanotechnology","Bismuth","Noise measurement"
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
DOI :
10.1109/NANO.2015.7388761