A Compact Analytical Model for the drain current of a TFET with non-abrupt doping profile incorporating the effect of band-gap narrowing

In this paper, we have developed a compact analytical model for the drain current of a Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET) with a non-abrupt lateral doping profile at the source-channel junction. The model highlights the effect of band gap narrowing in determining the drain current for a TFET with a non-abrupt doping profile. The model calculates the drain current by using a triangle approximation method to integrate the tunneling generation rate in the source-channel depletion region. The accuracy of the model is tested against two dimensional numerical simulations. The model predicts the drain current accurately in both the ON-state (strong inversion) as well as in the sub-threshold region.