A molybdenum disulfide piezoelectric strain gauge

This work experimentally probes and demonstrates the piezoelectric properties of single-atomic-layer MoS2. MoS2 devices were fabricated on a thin amorphous fused silica substrate, which was bonded to the high-stress location of a tuning fork to maximize the strain and resulting piezoelectric output. The dynamic strain was simultaneously measured in-situ with a commercial semiconductor strain gauge. This strain characterization technique allows us to dynamically strain MoS2 at a set frequency with maximum peak-to-peak strain levels up to 500 με (0.05%). We thus correlate piezoelectric output from the MoS2 sensor with the applied dynamic strain.