Title :
Resistive switching: From concept to device optimization
Author_Institution :
imec, B-3001 Leuven, Belgium
fDate :
7/1/2015 12:00:00 AM
Abstract :
This paper reviews some essential aspects of the filamentary bipolar resistive switching concept, and how appropriate material design and technology development makes it possible to translate it into a very attractive memory device, opening pathways for future memory replacements on condition specific key roadblocks are overcome.
Keywords :
"Switches","Random access memory","Electrodes","Resistance","Tin","Very large scale integration"
Conference_Titel :
Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on
DOI :
10.1109/NANO.2015.7388967
