Title :
Effect of the capture cross section of bulk traps in amorphous materials on the frequency dependence of the Capacitance-Voltage characteristic of MIS structures
Author :
M. Estrada;A. Cerdeira;V.S. Balderrama;I. Gardu?o;I. Hernandez;J. C. Tinoco;R. Picos;B. I?iguez
Author_Institution :
Secci?n de Electr?nica del Estado S?lido, Depto. Ingenier?a El?ctrica, CINVESTAV-IPN, Avda. IPN No 2508, C.P. 07360, Mexico D.F., Mexico
Abstract :
The dependence with the measurement frequency observed in the Capacitance-Voltage characteristics of Metal-Insulator-Semiconductor structures using an amorphous oxide semiconductor material is presented and analyzed. It is demonstrated by simulation that the effect is due to the Distribution of States (DOS) present in the energy gap of the semiconductor material and strongly depends on the capture cross section of the DOS.
Keywords :
"Frequency measurement","Semiconductor device measurement","Capacitance","Capacitance-voltage characteristics","Dielectric measurement","Capacitance measurement","Radio frequency"
Conference_Titel :
Power, Electronics and Computing (ROPEC), 2015 IEEE International Autumn Meeting on
DOI :
10.1109/ROPEC.2015.7395130
