• DocumentCode
    3738898
  • Title

    Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2

  • Author

    S. I. Gardu?o;M. Estrada;I. Hern?ndez;A. Cerdeira;J. I. Mej?a;M. E. Rivas;M. A. Quevedo

  • Author_Institution
    Section of Solid State Electronics, Electric Engineering Department, CINVESTAV-IPN, Mexico City, Mexico
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Bias stress study is presented in Metal-Insulator-Semiconductor structure using Indium-Gallium-Zinc oxide film on top of HfO2, deposited by pulsed laser deposition and atomic layer deposition, respectively. The produced effect on this interface is analyzed through hysteresis measurements at different bias conditions for several periods of time.
  • Keywords
    "Semiconductor device measurement","Stress","Voltage measurement","Hysteresis","Capacitance-voltage characteristics","Thin film transistors","Hafnium compounds"
  • Publisher
    ieee
  • Conference_Titel
    Power, Electronics and Computing (ROPEC), 2015 IEEE International Autumn Meeting on
  • Type

    conf

  • DOI
    10.1109/ROPEC.2015.7395135
  • Filename
    7395135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3738898