Title :
Optical properties of gallium arsenide passivated by ZnS
Author :
Fang Chen;Dan Fang;Li Xu;Jilong Tang;Xuan Fang;Xiaohua Wang;Guojun Liu;Xiaohui Ma;Zhipeng Wei
Author_Institution :
State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
fDate :
7/1/2015 12:00:00 AM
Abstract :
A simple chemical route for ZnS passivation on gallium arsenide (GaAs) and the optical properties of GaAs surfaces is characterized in this paper. From the photoluminescence (PL) mapping and X-ray Photoelectron Spectroscopy (XPS) results, the treatment process by ZnS is quite effective to remove the oxide layer of GaAs, increases the photoluminescence intensity of GaAs. This study shows that ZnS-coating by two-step chemical solution reaction with a self-assembling method provides a superior promising method for GaAs surface passivation.
Keywords :
"Gallium arsenide","II-VI semiconductor materials","Zinc compounds","Passivation","Substrates","Rough surfaces"
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2015 International Conference on
DOI :
10.1109/ICoOM.2015.7398849
