DocumentCode
37458
Title
Post Copper CMP Hybrid Clean Process for Advanced BEOL Technology
Author
Wei-Tsu Tseng ; Devarapalli, Vamsi ; Steffes, James ; Ticknor, Adam ; Khojasteh, Mahmoud ; Poloju, Praneetha ; Goyette, Colin ; Steber, David ; Tai, Li-Heng ; Molis, S. ; Zaitz, Mary ; Rill, Elliott ; Kennett, Michael ; Economikos, Laertis ; Lustig, Nafta
Author_Institution
Semicond. R&D Center, IBM, Hopewell Junction, NY, USA
Volume
26
Issue
4
fYear
2013
fDate
Nov. 2013
Firstpage
493
Lastpage
499
Abstract
A “hybrid” post Cu CMP cleaning process that combines acidic and basic clean in sequence is developed and implemented. The new process demonstrates the strengths of both acidic and basic cleans and achieves a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. It also eliminates the circular ring defects that occur intermittently during roller brush cleans. TXRF scans confirm the reduction of AlOx defects when using the hybrid clean process. XPS spectra show similar Cu surface oxidation states between the basic and hybrid clean processes. As revealed by XRD analysis, surface Cu oxide is dissolved into aqueous solution by the acidic clean chemical. The formation mechanism of circular ring defects and the key to their elimination is discussed.
Keywords
X-ray photoelectron spectra; chemical mechanical polishing; copper; oxidation; quality control; semiconductor device manufacture; surface cleaning; CMP defects; TXRF scans; XPS spectra; XRD analysis; advanced BEOL technology; back-end-of-the-line processes; chemical mechanical planarization; circular ring defects elimination; polish residues; post copper CMP hybrid cleaning process; scratches; semiconductor manufacturing; slurry abrasives; surface oxidation; Abrasives; Brushes; Cleaning; Copper; Planarization; Surface cleaning; Cu CMP; defect reduction; post clean;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2013.2273124
Filename
6558857
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