• DocumentCode
    37458
  • Title

    Post Copper CMP Hybrid Clean Process for Advanced BEOL Technology

  • Author

    Wei-Tsu Tseng ; Devarapalli, Vamsi ; Steffes, James ; Ticknor, Adam ; Khojasteh, Mahmoud ; Poloju, Praneetha ; Goyette, Colin ; Steber, David ; Tai, Li-Heng ; Molis, S. ; Zaitz, Mary ; Rill, Elliott ; Kennett, Michael ; Economikos, Laertis ; Lustig, Nafta

  • Author_Institution
    Semicond. R&D Center, IBM, Hopewell Junction, NY, USA
  • Volume
    26
  • Issue
    4
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    493
  • Lastpage
    499
  • Abstract
    A “hybrid” post Cu CMP cleaning process that combines acidic and basic clean in sequence is developed and implemented. The new process demonstrates the strengths of both acidic and basic cleans and achieves a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. It also eliminates the circular ring defects that occur intermittently during roller brush cleans. TXRF scans confirm the reduction of AlOx defects when using the hybrid clean process. XPS spectra show similar Cu surface oxidation states between the basic and hybrid clean processes. As revealed by XRD analysis, surface Cu oxide is dissolved into aqueous solution by the acidic clean chemical. The formation mechanism of circular ring defects and the key to their elimination is discussed.
  • Keywords
    X-ray photoelectron spectra; chemical mechanical polishing; copper; oxidation; quality control; semiconductor device manufacture; surface cleaning; CMP defects; TXRF scans; XPS spectra; XRD analysis; advanced BEOL technology; back-end-of-the-line processes; chemical mechanical planarization; circular ring defects elimination; polish residues; post copper CMP hybrid cleaning process; scratches; semiconductor manufacturing; slurry abrasives; surface oxidation; Abrasives; Brushes; Cleaning; Copper; Planarization; Surface cleaning; Cu CMP; defect reduction; post clean;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2013.2273124
  • Filename
    6558857