Numerical Study of Quantum-Dot-Embedded Solar Cells

Author

Chien-Chung Lin ; Ming-Hsuan Tan ; Che-Pin Tsai ; Kuei-Ya Chuang ; Lay, T.S.

Author_Institution

Inst. of Photonic Syst., Nat. Chiao Tung Univ., Tainan, Taiwan

Volume

19

Issue

5

fYear

2013

fDate

Sept.-Oct. 2013

Firstpage

1

Lastpage

10

Abstract

A quantum-dot-embedded solar cell model with antireflection coating is proposed and studied numerically. The device model was designed by using MATLAB coding. A proper inclusion of quantum-dot-enhanced carrier absorption was achieved through a modified absorption coefficient and a structure dependent carrier lifetime. The transmission matrix and quasi-drift diffusion method were applied to simulate the optical and electrical characteristics of the device. The experimental results were fitted first to validate the model and provide parameters for optimization. The final simulation showed that the power conversion efficiency (PCE) of an ideal InGaP/GaAs+InAs QD dual-junction cell could achieve 39.04%.

Keywords

III-V semiconductors; absorption coefficients; antireflection coatings; carrier lifetime; diffusion; gallium arsenide; gallium compounds; indium compounds; numerical analysis; power conversion; semiconductor quantum dots; solar cells; InGaP-GaAs-InAs; MATLAB coding; QD dual-junction cell; antireflection coating; device model; electrical characteristics; numerical study; optical characteristics; power conversion efficiency; quantum-dot-embedded solar cell model; quantum-dot-enhanced carrier absorption coefficient; quasidrift diffusion method; structure dependent carrier lifetime; transmission matrix; Absorption; Charge carrier lifetime; Current density; Gallium arsenide; Mathematical model; Photovoltaic cells; Radiative recombination; Intermediate band solar cell (IBSC); photovoltaic cells; quantum dot; simulation; tandem cell; transmission matrix method;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2013.2244563

Filename

6425400