Steady state analysis of Tin incorporated Group IV alloy based transistor laser

In this paper we present a steady state analysis of Si-i_0.12Ge_0.73Sn_0.15/Si_0.11Ge_0.73Sn_0.14 transistor laser (TL) with strain-balanced Ge_0.85Sn_0.15 single quantum well (QW) in the base. Coupled rate equations in the QW region is used to obtain threshold base current density, steady state electron and photon densities. We find that the nature of variation of threshold base current density, steady state electron and photon density in QW region with electron capture life time is same as in III-V TL. The analysis is helpful for designing the Tin incorporated Group IV alloy based TL.