Title :
Distribution projecting the reliability for 40 nm ReRAM and beyond based on stochastic differential equation
Author :
Z. Wei;K. Eriguchi;S. Muraoka;K. Katayama;R. Yasuhara;K. Kawai;Y. Ikeda;M. Yoshimura;Y. Hayakawa;K. Shimakawa;T. Mikawa;S. Yoneda
Author_Institution :
Panasonic Semiconductor Solutions Co., Ltd., 1 Kotari-yakemachi, Nagaokakyo, Kyoto, 617-8520, Japan
Abstract :
A physical analytic formula based on Stochastic Differential Equation was successfully developed to describe intrinsic ReRAM variation. The formula was proved useful for projecting scaled ReRAM memory window and resistance distribution after long-term retention, verified by testing 40 nm 2-Mbit ReRAM. The formula also centered on practical and quantitative filament characterization.
Keywords :
"Resistance","Stochastic processes","Immune system","Mathematical model","Differential equations","Reliability","Biological system modeling"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409650
