• DocumentCode
    3748124
  • Title

    Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

  • Author

    Soo Gil Kim;Tae Jung Ha;Seonghyun Kim;Jae Yeon Lee;Kyung Wan Kim;Jung Ho Shin;Yong Taek Park;Suk Pyo Song;Beom Yong Kim;Wan Gee Kim;Jong Chul Lee;Hyun Sun Lee;Jong Ho Song;Eung Rim Hwang;Sang Hoon Cho;Ja Chun Ku;Jong Il Kim;Kyu Sung Kim;Jong Hee Yoo;Hyo J

  • Author_Institution
    R&D division, SK Hynix Inc., 2091 Gyeongchung-daero Bubal-eub, Icheon-si Gyeonggi-do, Korea, 467-701
  • fYear
    2015
  • Abstract
    In this paper, the authors report that 2x nm cross-point ReRAM with 1S1R structure has been successfully developed. Off-current at 1/2 Vsw of 1S1R is one of key factor for high-density ReRAM. NbO2 was chosen as a selector material and off-current and forming characteristics were improved by using stack engineering of top and bottom barriers as well as spacer materials. Finally array operation was characterized with the integration of selector and resistor materials.
  • Keywords
    "Resistors","Current measurement","Switches","Films","Transistors","CMOS integrated circuits","CMOS technology"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409668
  • Filename
    7409668
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3748124