DocumentCode
3748133
Title
Reliability variability simulation methodology for IC design: An EDA perspective
Author
Aixi Zhang;Chunyi Huang;Tianlei Guo;Alvin Chen;Shaofeng Guo;Runsheng Wang;Ru Huang;Jushan Xie
Author_Institution
Cadence Design Systems, San Jose, USA
fYear
2015
Abstract
The reliability variation simulation methodology for advanced integrated circuit (IC) design is presented from an Electronic Design Automation (EDA) perspective. Reliability effects, such as hot carrier injection (HCI) and bias temperature instability (BTI), continue to be one of major concerns when devices scale down to smaller sizes. Reliability variability, considering process variation (PV) and aging variation (AV), is becoming critical for circuit reliability and yield. In this paper, we present and compare various reliability variability methodologies that incorporate process and aging variations for circuit simulation. Additionally, the correlation between PV and AV is analyzed. Finally, two representative circuits (ring oscillator and SRAM) are demonstrated with the reliability variation-aware simulation.
Keywords
"Aging","Integrated circuit modeling","Solid modeling","Integrated circuit reliability","Correlation","Degradation"
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN
2156-017X
Type
conf
DOI
10.1109/IEDM.2015.7409677
Filename
7409677
Link To Document