• DocumentCode
    3748133
  • Title

    Reliability variability simulation methodology for IC design: An EDA perspective

  • Author

    Aixi Zhang;Chunyi Huang;Tianlei Guo;Alvin Chen;Shaofeng Guo;Runsheng Wang;Ru Huang;Jushan Xie

  • Author_Institution
    Cadence Design Systems, San Jose, USA
  • fYear
    2015
  • Abstract
    The reliability variation simulation methodology for advanced integrated circuit (IC) design is presented from an Electronic Design Automation (EDA) perspective. Reliability effects, such as hot carrier injection (HCI) and bias temperature instability (BTI), continue to be one of major concerns when devices scale down to smaller sizes. Reliability variability, considering process variation (PV) and aging variation (AV), is becoming critical for circuit reliability and yield. In this paper, we present and compare various reliability variability methodologies that incorporate process and aging variations for circuit simulation. Additionally, the correlation between PV and AV is analyzed. Finally, two representative circuits (ring oscillator and SRAM) are demonstrated with the reliability variation-aware simulation.
  • Keywords
    "Aging","Integrated circuit modeling","Solid modeling","Integrated circuit reliability","Correlation","Degradation"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2015 IEEE International
  • Electronic_ISBN
    2156-017X
  • Type

    conf

  • DOI
    10.1109/IEDM.2015.7409677
  • Filename
    7409677