Renovation of power devices by GaN-based materials

Attention has been paid to power electronics to make energy-saving society. Though the wide bandgap semiconductors are expected to realize efficient power converters by replacing Si ones, it will be beneficial to look back their evolution paths. Si power devices have been changing their structures to adapt to the wide range of requirements such as, blocking-voltage, handling-current, and switching-speed. In this paper, some perspectives of the device-design for GaN-based power transistors are introduced depending on the three different application layers.