DocumentCode :
3748219
Title :
Low-cost and TSV-free monolithic 3D-IC with heterogeneous integration of logic, memory and sensor analogy circuitry for Internet of Things
Author :
Tsung-Ta Wu;Chang-Hong Shen;Jia-Min Shieh;Wen-Hsien Huang;Hsing-Hsiang Wang;Fu-Kuo Hsueh;Hisu-Chih Chen;Chih-Chao Yang;Tung-Ying Hsieh;Bo-Yuan Chen;Yu-Shao Shiao;Chao-Shun Yang;Guo-Wei Huang;Kai-Shin Li;Ting-Jen Hsueh;Chien-Fu Chen;Wei-Hao Chen;Fu-Liang Y
Author_Institution :
National Nano Device Laboratories, No.26, Prosperity Road 1, Hsinchu 30078, Taiwan
fYear :
2015
Abstract :
For the first time, a CO2 far-infrared laser annealing (CO2-FIR-LA) technology was developed as the activation solution to enable highly heterogeneous integration without causing device degradation for TSV-free monolithic 3DIC. This process is capable to implement small-area-small-load vertical connectors, gate-first high-k/metal gate MOSFETs and non-Al metal inter-connects. Such a far-infrared laser annealing exhibits excellent selective activation capability that enables performance-enhanced stacked sub-40nm UTB-MOSFETs (Ion-enhanced over 50 %). Unlike TSV-based 3D-IC, this 3D Monolithic IC enables ultra-wide-IO connections between layers to achieve high bandwidth with less power consumption. A test chip with logic circuits, 6T SRAM, ReRAM, sense amplifiers, analog amplifiers and gas sensors was integrated to confirm the superiority in heterogeneous integration of proposed CO2-FIR-LA technology. This chip demonstrates the most variable functions above reported 3D Monolithic ICs. This CO2-FIR-LA based TSV-free 3D Monolithic IC can realize low cost, small footprint, and highly heterogeneous integration for Internet of Things.
Keywords :
"Logic gates","Random access memory","Silicon","Annealing","Metals","Decoding","Three-dimensional displays"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
Type :
conf
DOI :
10.1109/IEDM.2015.7409765
Filename :
7409765
Link To Document :
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