CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si

In this paper, we present heterogeneous integration of SiGe/Ge and III-V semiconductors on Si for electronic-photonic integrated circuits through CMOS photonics technologies. The introduction of high-mobility channel materials, which is promising for achieving high-performance MOSFETs, are also beneficial to photonics for off-chip/on-chip optical interconnection and bio/medical sensors. As for SiGe CMOS photonics, strained SiGe is shown to enhance modulation efficiency for optical modulators. We demonstrated that the plasma dispersion effect is enhanced by strain application to SiGe owing to a decrease in the effective hole mass. As for Ge CMOS photonics, Ge-based photonic-wire waveguides are demonstrated for Mid-IR applications by using photonic Ge-on-Insulator wafers for the first time. As for III-V CMOS photonics, we developed high-quality photonic III-V on Insulator wafers by using direct wafer bonding. InGaAsP photonic-wire devices including optical switches and InGaAs photodetectors are demonstrated. We have also successfully demonstrated wafer-size-scalable III-V-OI wafers by using a III-V epi on Si wafer.