Title :
Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET
Author :
Alireza Alian;Jacopo Franco;Anne Vandooren;Yves Mols;Anne Verhulst;Salim El Kazzi;Rita Rooyackers;Devin Verreck;Quentin Smets;Anda Mocuta;Nadine Collaert;Dennis Lin;Aaron Thean
Author_Institution :
imec, Kapeldreef 75, B-3001 Leuven, Belgium
Abstract :
InGaAs planar TFETs with 70% In content are fabricated and characterized. The increase of the In content of the 8 nm channel from 53% to 70% is found to significantly boost the performance of the device. Record performance Ion=4 μA/μm at Ieff = 100 μA/μm, Vdd=0.5V and Vd=0.3 V with minimum sub-threshold swing (SSmin) of 60 mV/dec at 300K is obtained for a homo-junction InGaAs device. Reliability assessment shows that the TFET SS and transconductance (gm) are more immune to PBTI stress than its equivalent MOSFET device.
Keywords :
"Indium gallium arsenide","MOSFET","Stress","Logic gates","Indium phosphide","III-V semiconductor materials"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409811
