Title :
Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels
Author :
Alan Seabaugh;Sara Fathipour;Wenjun Li;Hao Lu;Jun Hong Park;Andrew C. Kummel;Debdeep Jena;Susan K. Fullerton-Shirey;Patrick Fay
Author_Institution :
Dept. of Electrical Engineering, University of Notre Dame, Notre Dame IN 46556 USA
Abstract :
As the understanding of tunnel field-effect transistors (TFET) advances, new approaches are emerging to lower off-currents, lower defect density in tunnel junctions, and to increase the highest current at which the subthreshold swing of 60 mV/decade (I60) appears. III-N heterojunctions and transition-metal-dichalcogenide (TMD) materials are forcing some new thinking in junction design and doping.
Keywords :
"Logic gates","Doping","Ions","Tunneling","Silicon","Aluminum oxide"
Conference_Titel :
Electron Devices Meeting (IEDM), 2015 IEEE International
Electronic_ISBN :
2156-017X
DOI :
10.1109/IEDM.2015.7409835
