Title :
SiGe BiCMOS VCO with 27% tuning range for 5G communications
Author :
Fabio Padovan;Marc Tiebout;Franz Dielacher;Andrea Bevilacqua;Andrea Neviani
Author_Institution :
DEI, University of Padova, Italy
Abstract :
A SiGe BiCMOS VCO with a transformer-coupled varactor operating from 12 to 15.9 GHz is presented. The oscillator core features a phase noise as low as -117dBc/Hz at 1 MHz offset from the 14.2 GHz carrier while drawing 8 mA from the 3.3 V supply. The VCO shows a state-of-the-art FOMt of -190dBc/Hz. The trade-off for the technology selection is described in the introduction. The oscillator is tailored to the communication systems for the upcoming 5G applications. New radios that will operate from 6 GHz to as high as 100 GHz may be needed.
Keywords :
"Voltage-controlled oscillators","Silicon germanium","Phase noise","Tuning","Frequency measurement","Heterojunction bipolar transistors"
Conference_Titel :
Microwave Conference (APMC), 2015 Asia-Pacific
Print_ISBN :
978-1-4799-8765-8
DOI :
10.1109/APMC.2015.7411748