DocumentCode
375029
Title
Very high conversion gain microwave frequency doubler circuit design
Author
Huang, Bob Y. ; Branner, G.R.
Volume
1
fYear
2000
fDate
2000
Firstpage
24
Abstract
This paper focuses on the design and fabrication of frequency doublers operating in the RF and microwave frequency ranges. A single PHEMT transistor is employed in a new approach which has resulted in conversion gains of 10 dB or greater. This is a significant improvement over previous realizations
Keywords
HEMT circuits; UHF frequency convertors; frequency multipliers; microwave frequency convertors; 10 dB; 6.3 GHz; PHEMT; RF frequency doubler; frequency doubler circuit design; microwave frequency doubler circuit; pseudomorphic HEMT; very high conversion gain doubler; Circuit synthesis; Fabrication; Frequency conversion; Gain; Microwave frequencies; Microwave transistors; PHEMTs; Power harmonic filters; Power system harmonics; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
Conference_Location
Lansing, MI
Print_ISBN
0-7803-6475-9
Type
conf
DOI
10.1109/MWSCAS.2000.951578
Filename
951578
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