• DocumentCode
    3750296
  • Title

    Electromigration in hybrid bonding interconnects for 3-D IC impact of the diffusion barrier

  • Author

    S. Moreau;Y. Beilliard;P. Coudrain;D. Bouchu;L. Di Cioccio;L. Arnaud

  • Author_Institution
    Univ. Grenoble Alpes, F-38000 Grenoble, France. CEA, LETI, MINATEC Campus, F-38054 Grenoble, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Electromigration experiments have been carried out on 3D interconnect structures with hybrid (Cu/SiO2) bonding architectures. The investigated test structures highlighted that the Cu/Cu interface provides better electromigration performance than a Cu/SiO2 interface. Moreover, the different Cu processes analyzed provide voiding mechanisms unchanged in comparison to the known damascene architecture.
  • Keywords
    "Bonding","Failure analysis","Electromigration","Resistance","Imaging","Grain boundaries","Integrated circuit interconnections"
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging and Technology Conference (EPTC), 2015 IEEE 17th
  • Type

    conf

  • DOI
    10.1109/EPTC.2015.7412414
  • Filename
    7412414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3750296