150-GHz SPDT switch with rat-race coupler topology in 0.13-μm SiGe BiCMOS

This paper proposes a novel 150-GHz single-pole-double-throw (SPDT) switch based on a rat-race coupler topology. It is designed with a 0.13-μm SiGe BiCMOS and occupies a chip area of 507 μm×542 μm. The switch achieves insertion loss of 4.0 dB/3.3 dB, isolation of 36.3 dB/35.9 dB, input return loss of 18.7 dB/12.3 dB, output return loss of 21.7 dB/26.1 dB and power-handling capabilities of 22.2 dBm/15.9 dBm in the Tx/Rx mode at 150 GHz, respectively. The proposed switch demonstrates reasonable insertion losses and superior performances of isolations, return losses and power-handling capabilities, therefore has potential to be used in D-band radios.