• DocumentCode
    3750656
  • Title

    Low temperature Si-Si bonding process design based on plasma surface treatment

  • Author

    Wang Xiaoguang;Li Yuling;Qi Hong

  • Author_Institution
    Engineering Center of Chip and Microsystem, 49th Research Institute of CETC, Harbin, China
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Focused on the plasma pretreatment process, low temperature silicon-silicon bonding process is designed under a variety of atmosphere. Strength stable silicon-silicon bonding without annealing cavities is realized. Leak rate of samples is less than 1.0×10-10Pa · m3 / s, the bonding strength is greater than 20MPa / m3, is very close to the strength of the bulk silicon. This process is able to satisfy the application requirements in MEMS, semiconductor and MMIC.
  • Keywords
    "Bonding","Decision support systems","Plasma temperature","Atmosphere","Annealing"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7413147
  • Filename
    7413147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3750656