D-band MEMS switch in standard BiCMOS technology

A D-band low loss MEMS switch using BiCMOS process including embedded RF-MEMS structure has been presented in this paper. Both the Mechanical characteristics and RF characteristics of the MEMS switch are analyzed. Through detailed design consideration to reduce the coupling loss, the switch employing match networks of high impedance transmission line exhibits a measured insertion loss of 1.18dB and a measured return loss of 21.69dB at 140GHz. By setting the MEMS switch operated in the resonance state, 23-31dB measured isolation is obtained within the frequency range of 130-170GHz. The monolithic integrated switch occupies 0.47×0.55mm² chip area including all the pads. The MEMS bridge with tether type anchor is actuated with pull-in voltage of 37V.