• DocumentCode
    3750852
  • Title

    A broadband SiGe Power Amplifier for E-band communication applications

  • Author

    Manuel Bejarano Carmona;Tobias Tired

  • Author_Institution
    Siversima A.B., Torshamnsgatan 9, S-164 40, Kista, Sweden
  • Volume
    3
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This work presents a broadband SiGe Power Amplifier (PA) for operation between 60-90 GHz covering both 71-76 GHz and 81-86 GHz E-Band sub-bands. It consists of a two-stage differential cascode amplifier using an LC-interstage matching network in the interface between the stages. Single-ended to differential conversion is accomplished by the use of two stacked 1-to-1 transformers, achieving a simulated insertion loss of 0.63 dB and 0.45 dB at input and output, respectively. The design has been implemented using Infineon B7HF200 0.18 pm SiGe HBT process with fp/fmax 200/250 GHz. Measured performance indicates that the PA delivers 12.6 dBm saturated output power (Psat) with 4.6% peak Power Added Efficiency (PAE) at 84 GHz while providing at least 6 dB of gain covering a frequency range from 62 to 90 GHz. The circuit consumes 102 mA from a 2.8 V power supply and occupies an area of 0.105 mm2.
  • Keywords
    "Frequency measurement","Transistors","Silicon germanium","Metals","Broadband communication","Power generation","Gain"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7413435
  • Filename
    7413435