• DocumentCode
    3752299
  • Title

    Switching behaviour of a BIMOS switching stage

  • Author

    L. Lorenz;H. Amann

  • Author_Institution
    Siemens AG, Power Semiconductor Division, Frankfurter Ring 152, 8000 Mü
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    112
  • Lastpage
    119
  • Abstract
    The switching behaviour of a BIMOS switching stage is investigated, taking into account the most important parasitic network and device parameters. Its short-circuit behaviour is also discussed and ways of improving it are presented. The power range is expanded by connecting power MOSFETs in parallel and extending the switching behaviour of the Darlington stage. The parallel-switching of FETs is also analysed. Possible ways of reducing dynamic and static losses are discussed in a power-loss treatment.
  • Keywords
    "Switches","Delays","Integrated circuits","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1986 17th Annual IEEE
  • ISSN
    0275-9306
  • Print_ISBN
    978-9-9963-2327-0
  • Type

    conf

  • DOI
    10.1109/PESC.1986.7415553
  • Filename
    7415553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3752299