DocumentCode :
3755185
Title :
Next generation arc welding machines based on Silicon Carbide MOSFETS and high frequency planar magnetics
Author :
Rodrigo C. S. Machado;Braz J. C. Filho
Author_Institution :
Graduate Program in Electrical engineering - Federal University of Minas Gerais - Belo Horizonte, Brazil
fYear :
2015
Firstpage :
1
Lastpage :
6
Abstract :
Silicon Carbide (SiC) Power MOSFET devices are rapidly being introduced in different applications due their advantages over their silicon (Si) counterparts. Higher switching frequency (fsw) coupled with planar magnetics opens new possibilities in terms of increasing the power density of converter, while also improving their efficiency and lowering costs. In this paper, SiC MOSFETS and planar magnetics are employed to demonstrate new possibilities in arc welding machines technology. Design details of high power density power source for a multi-process welding machine are presented. Test results for 3.9kW/150A and 200 kHz switching frequency working at rated load and under over load condition are included.
Keywords :
"Silicon carbide","Silicon","Switches","MOSFET","Insulated gate bipolar transistors","Switching frequency","Welding"
Publisher :
ieee
Conference_Titel :
Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC), 2015 IEEE 13th Brazilian
Type :
conf
DOI :
10.1109/COBEP.2015.7420091
Filename :
7420091
Link To Document :
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