Title :
Chapter XIII semiconducting compounds
Author :
A. C. Beer;K. E. Cochran
Author_Institution :
Semiconductor and Dielectrics Division, Battelle Memorial Institute, Columbus, Ohio, United States of America
Abstract :
Welker (1) reports on the semiconducting properties of compounds of elements of Group III of the periodic system (Al, Ga, In) with elements of Group V (P, As, Sb). Predictions of their electrical properties based on bonding considerations agree well with the experimental results. Several properties of these compounds surpass those of elements of Group IV; thus the electron mobility of InSb has been measured to be as high as 25,000 cm.2/volt-sec.
Keywords :
"Semiconductor device measurement","Gallium","Bonding","Intermetallic","Silicon","Semiconductor diodes","Thermal expansion"
Conference_Titel :
Literature on Dielectrics, Digest of
