A Model Study of Defects and Faults in Embedded Spin Transfer Torque (STT) MRAM Arrays

There has been a significant interest in Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) as a candidate for emerging memory technology for last-level embedded caches in the recent years. High density (3-4x of SRAM), non-volatility, nano-second Read and Write speeds, and process and voltage compatibility with CMOS are the attractive properties of this technology. A few studies have expounded on the reliability in this technology but various fault manifestations have not been studied in detail in the past. This paper attempts to study the fault models in STT-MRAM under both parametric variations as well as electrical defects (opens and shorts). Sensitivity of Read, Write and Retention to material and lithographic process parameters has been studied. Also electrical defects viz. intra-cell and inter-cell opens and shorts have been considered and the corresponding fault models have been identified and classified.