DocumentCode
375647
Title
High-voltage GaAs power-HBTs for base-station amplifiers
Author
Kurpas, P. ; Brunner, F. ; Doemer, R. ; Janke, B. ; Heymann, P. ; Maasdorf, A. ; Doser, W. ; Auxemery, P. ; Blanck, H. ; Pons, D. ; Wurfl, J. ; Heinrich, W.
Author_Institution
Ferdinand-Braun-Inst., Berlin, Germany
Volume
2
fYear
2001
fDate
20-24 May 2001
Firstpage
633
Abstract
Base stations require high-power devices operating at bias voltages around 26 V. This paper reports on GaAs HBTs with increased breakdown voltage. Transistors on unthinned wafers deliver 3.2 W at 2 GHz for 27 V bias. 100 Ohms output impedance and 74% PAE make them very attractive for base-station amplifiers.
Keywords
III-V semiconductors; UHF bipolar transistors; UHF power amplifiers; gallium arsenide; heterojunction bipolar transistors; power bipolar transistors; semiconductor device breakdown; 2 GHz; 26 V; 27 V; 3.2 W; 74 percent; GaAs; GaAs power HBTs; HV operation; base-station amplifiers; bias voltages; breakdown voltage; high-voltage HBTs; Base stations; Doping; Electronic ballasts; Frequency; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Impedance; MESFETs; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.966974
Filename
966974
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