A GaAs MESFET transient model capable of predicting trap-induced memory effects under complex digital modulation

Author

Wang, F. ; Jemison, W.D. ; Hwangy, J.C.M.

Author_Institution

Dept. of ECE, Lafayette Coll., Easton, PA, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

815

Abstract

A transient model for GaAs MESFETs is presented that can predict distortion of digitally modulated carrier waveforms due to memory effects induced by both low-frequency dispersion and gate-lag. Experimental and simulated results are presented which demonstrate, for the first time, the successful prediction of these effects for multilevel pulse modulated waveforms.

Keywords

III-V semiconductors; Schottky gate field effect transistors; electron traps; gallium arsenide; hole traps; modulation; semiconductor device models; transient analysis; GaAs; GaAs MESFET transient model; complex digital modulation; digitally modulated carrier waveforms; gate-lag; low-frequency dispersion; multilevel pulse modulated waveforms; trap-induced memory effects prediction; waveform distortion; Digital modulation; Gallium arsenide; MESFETs; Nonlinear distortion; Predictive models; Pulse modulation; Radio control; Radio frequency; Semiconductor process modeling; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967016

Filename

967016