DocumentCode
375675
Title
A global modeling approach using interpolating wavelets
Author
Goasguen, S. ; Tomeh, M.M. ; El-Ghazaly, S.M.
Author_Institution
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Volume
2
fYear
2001
fDate
20-24 May 2001
Firstpage
897
Abstract
A MESFET and a two-dimensional cavity enclosing a cylinder are simulated using a nonuniform mesh generated by an interpolating wavelet scheme. A self-adaptive mesh is implemented and controlled by the wavelet coefficient threshold. A fine mesh can therefore be used in domains where the unknown quantities are varying rapidly and a coarse mesh can be used where the unknowns are varying slowly. It is shown that good accuracy can be achieved while compressing the number of unknowns by 50 to 80% during the whole simulation. This represents the on going effort toward a numerical technique that uses wavelets to solve both Maxwell´s equations and the semiconductor equations. Such a method is of great interest to deal with the multi-scale problem that is the full wave simulation of active microwave circuits.
Keywords
cavity resonators; microwave field effect transistors; modelling; semiconductor device models; wavelet transforms; 2D cavity enclosed cylinder; MESFET; Maxwell equations; active microwave circuits; coarse mesh; fine mesh; full wave simulation; global modeling approach; interpolating wavelets; multi-scale problem; nonuniform mesh; numerical technique; self-adaptive mesh; semiconductor equations; two-dimensional cavity; wavelet coefficient threshold; Circuit simulation; Electromagnetic coupling; MESFETs; Maxwell equations; Mesh generation; Microwave circuits; Microwave devices; Microwave theory and techniques; Nonlinear equations; Wavelet coefficients;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location
Phoenix, AZ, USA
ISSN
0149-645X
Print_ISBN
0-7803-6538-0
Type
conf
DOI
10.1109/MWSYM.2001.967036
Filename
967036
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