• DocumentCode
    375677
  • Title

    Current mode class-D power amplifiers for high efficiency RF applications

  • Author

    Kobayashi, H. ; Hinrichs, J. ; Asbeck, P.M.

  • Author_Institution
    Fuji Electr. Co. Ltd., Nagano, Japan
  • Volume
    2
  • fYear
    2001
  • fDate
    20-24 May 2001
  • Firstpage
    939
  • Abstract
    We show that current mode class-D (CMCD) power amplifiers can achieve high efficiency at RF frequencies. In contrast with conventional voltage-mode class D amplifiers, the CMCD features "zero voltage switching" which eliminates the output capacitance discharge loss. Experimental CMCD amplifiers with 76.3% PAE at 290 mW output and 71.3% PAE at 870 mW output are demonstrated, using GaAs FETs at 900 MHz.
  • Keywords
    III-V semiconductors; MESFET circuits; UHF power amplifiers; current-mode circuits; gallium arsenide; switching circuits; 290 to 870 mW; 71.3 to 76.3 percent; 900 MHz; GaAs; GaAs MESFETs; class-D power amplifiers; current mode power amplifiers; high efficiency RF applications; zero voltage switching; Filters; Gallium arsenide; High power amplifiers; Inductance; Parasitic capacitance; Radio frequency; Radiofrequency amplifiers; Switches; Zero current switching; Zero voltage switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2001 IEEE MTT-S International
  • Conference_Location
    Phoenix, AZ, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-6538-0
  • Type

    conf

  • DOI
    10.1109/MWSYM.2001.967047
  • Filename
    967047