An internally matched LTCC 3G W-CDMA 180 watt LDMOS power amplifier

Author

Estes, J. ; Piel, P. ; Shapiro, G. ; Pavio, A. ; Hurst, M. ; Call, J. ; Funk, G.

Author_Institution

Motorola Inc., Parkway, AZ, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

1357

Abstract

A wide band CDMA LDMOS power transistor, with internal RF matching and bias networks, fabricated on LTCC (Low Temperature Cofired Ceramic) substrates, has been developed. The internally matched packaged device can be configured to deliver output power of 180 watts, while providing third order inter-modulation distortion products less than -40 dBc, 20% efficiency, and 12 dB of gain. The terminal impedances of the packaged LDMOS transistor, at the gate and drain leads respectively, are greater than 5 /spl Omega/. The LTCC elements each contain embedded passive L-C circuitry, forming the input and output matching networks. These networks are designed to transform to a high level of impedance, to the source and load impedance targets required by the devices in order to achieve optimal wide band CDMA performance.

Keywords

MOSFET circuits; UHF circuits; UHF power amplifiers; ceramic packaging; code division multiple access; impedance matching; intermodulation distortion; wideband amplifiers; 180 W; 20 percent; LDMOS power transistor; LTCC; bias networks; input matching networks; internal RF matching; load impedance targets; output matching networks; output power; source impedance targets; terminal impedances; third order inter-modulation distortion products; wide band CDMA amplifier; Ceramics; Impedance; Multiaccess communication; Packaging; Power amplifiers; Power transistors; Radio frequency; Radiofrequency amplifiers; Temperature; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967147

Filename

967147