DocumentCode
375748
Title
Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas
Author
Miyata, H. ; Ohshima, T. ; Ikegami, T. ; Ebihara, K. ; Thareja, R.K.
Author_Institution
Dept. of Electr. & Comput. Eng., Kumamoto Univ., Japan
Volume
1
fYear
2001
fDate
15-19 July 2001
Abstract
Carbon nitride (CN/sub x/) thin films were deposited on Si (100) substrate in NO ambient gas using pulsed KrF excimer laser deposition. N/C composition ratio of 1.02 was obtained at a laser fluence of 5 J/cm/sup 2/ and 200 mTorr NO.
Keywords
Fourier transform spectra; amorphous state; bonds (chemical); carbon compounds; electron probe analysis; infrared spectra; pulsed laser deposition; stoichiometry; thin films; 200 mtorr; CN; CN bonds; EPMA; FTIR spectra; N/C composition ratio; NO ambient gas; Si; amorphous films; n-type Si [100] substrate; near stoichiometric composition ratio; pulsed excimer laser deposition; thin film deposition; Amorphous materials; Carbon dioxide; Diamond-like carbon; Gas lasers; Laser modes; Laser theory; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.967717
Filename
967717
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