Title :
Carbon nitride thin films prepared by KrF pulsed excimer laser deposition in NO ambient gas
Author :
Miyata, H. ; Ohshima, T. ; Ikegami, T. ; Ebihara, K. ; Thareja, R.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Kumamoto Univ., Japan
Abstract :
Carbon nitride (CN/sub x/) thin films were deposited on Si (100) substrate in NO ambient gas using pulsed KrF excimer laser deposition. N/C composition ratio of 1.02 was obtained at a laser fluence of 5 J/cm/sup 2/ and 200 mTorr NO.
Keywords :
Fourier transform spectra; amorphous state; bonds (chemical); carbon compounds; electron probe analysis; infrared spectra; pulsed laser deposition; stoichiometry; thin films; 200 mtorr; CN; CN bonds; EPMA; FTIR spectra; N/C composition ratio; NO ambient gas; Si; amorphous films; n-type Si [100] substrate; near stoichiometric composition ratio; pulsed excimer laser deposition; thin film deposition; Amorphous materials; Carbon dioxide; Diamond-like carbon; Gas lasers; Laser modes; Laser theory; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Sputtering;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967717
