• DocumentCode
    3758364
  • Title

    LF and HF noise of microwave devices

  • Author

    A. Jelenski;L. Dobrzanski;W. Wiatr

  • Author_Institution
    Inst. Technol. Materialow Elektronicznych, Warsaw, Poland
  • Volume
    3
  • fYear
    1998
  • Firstpage
    732
  • Abstract
    In this paper the results of an investigation of substrate and surface treatment on LF and HF noise performances of GaAs FETs and Schottky diodes are described. They show that the improvement of LF noise characteristics leads in general to the improvement of HF noise at low current densities, where hot electron noise is negligible.
  • Keywords
    "Low-frequency noise","Hafnium","Microwave devices","Frequency","Schottky diodes","Gallium arsenide","Impedance","Manufacturing","Chromium","Noise level"
  • Publisher
    ieee
  • Conference_Titel
    Microwaves and Radar, 1998. MIKON ´98., 12th International Conference on
  • Print_ISBN
    83-906662-0-0
  • Type

    conf

  • DOI
    10.1109/MIKON.1998.742816
  • Filename
    742816
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3758364