• DocumentCode
    3758402
  • Title

    Development of novel semiconductor devices

  • Author

    L. Dobrzanski

  • Author_Institution
    Inst. of Electron. Mater. Technol., Warsaw, Poland
  • Volume
    3
  • fYear
    1998
  • Firstpage
    747
  • Abstract
    The physical background of novel small-scale fast semiconductor devices has been presented. The performance constrains of hot electron and quantum devices have been discussed. The prospects of development and application of these devices has been indicated. Experimental structures studied at the Institute of Electronic Materials Technology and technologies needed for their realisation have also been presented.
  • Keywords
    "Semiconductor devices","Gallium arsenide","FETs","Materials science and technology","Laboratories","Particle scattering","Electron devices","Temperature","Industrial relations","Electron mobility"
  • Publisher
    ieee
  • Conference_Titel
    Microwaves and Radar, 1998. MIKON ´98., 12th International Conference on
  • Print_ISBN
    83-906662-0-0
  • Type

    conf

  • DOI
    10.1109/MIKON.1998.742820
  • Filename
    742820
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3758402